study of buried silicon nitride layers synthesized by ion

Journal Publications

2020-7-8Ion channeling studies on mixed phases formed in MOCVD grown Mg-doped GaN on Al2O3 (0001) 1999 Ieee Hong Kong Electron Devices Meeting Proceedings 1999 148-152 [149] C S Lee I H Wilson W Y Cheung Y J Chen J B Xu S P Wong Ion beam synthesized cobalt germanide alloy by metal vapor vacuum arc implantation

Silicon wafer and semiconductor industry news

In a study in the journal Nanotechnology members of UCI's Nano Thermal Energy Research Group highlight the attributes of holey silicon a computer chip wafer with tiny vertically etched orifices that work to shuttle heat to desired locations (CTE) between the GaN/AlGaN epitaxial layers and the silicon substrate While it's possible

Ion beam synthesis of thin films Proceedings of SPIE

The formation of buried insulating layer in silicon crystal is carried out by high dose O and N implantation Epitaxial growth of high Tc YBCO superconductive thin films on SrTiO3 is studied by DC magnetron sputtering Introduction Ion beam synthesis is one of the important technique producing films coatings and buried layers in bulk material

Silicon carbide

The theoretical gravimetric capacity of silicon (Si) reaches almost 4 000 mAh g −1 This unparalleled value has stimulated the battery community to invest considerable research efforts because the high gravimetric capacity enables one to increase the energy densities of lithium-ion batteries (LIBs) significantly and thus bring future LIB applications such as electrical vehicles to a

A study of buried silicon nitride layers formed by

1986-9-1A buried silicon nitride layer of 330 nm thickness with a single crystal residual silicon layer of 220 nm on it was produced by the implantation of 150 keV N + ions into silicon with subsequent annealing at 1200C for 2 to 10 h The implantation was performed at a dose of 1 2 10 18 cm −2 with a stationary beam and wafer scanning instead of beam scanning

Single

INTRODUCTION The exploration of single-atom heterogeneous catalysts (SACs) based on noble metals has been stimulated by the prospect of improving metal utilization and selectivity simultaneously in sustainable catalytic processes [] Unfortunately atomically dispersed metals on common hosts (e g metals metal oxides and carbons) are often thermodynamically unstable and aggregate into

Study of buried silicon nitride layers synthesized by

1980-12-1The formation of buried layers of silicon nitride by nitrogen-ion implantation in single-crystal silicon is studied He + backscattering x-ray diffraction scanning and transmission electron microscopies and infrared absorption measurements were used for the physico-chemical characterization sheet resistivity determination spreading-resistance profile and current-voltage characteristics

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ACTA PHYSJCA SINICA Volume 2 Number 5 (Overseas Edition) May 1993 FORMATION OF A BURIED LAYER OF ALUMINIUM NITRIDE BY HIGH DOSE N2+ IMPLANTATION INTO ALUMINIUM (Received 1 July 1992) Aluminium films with various thicbes betwen 700 nm and lp were deposited on Si (100) substrates and 400 keV N ions with doses ranging from 4 3 x loi7 to 1 8 x lo'* N/ ere

Urbach edge disorder and absorption on

2009-1-10Dependence of microcrystalline silicon growth on ion flux at the substrate surface in a saddle field PECVD p 99 'Seed layers' for the preparation of hydrogenated microcrystalline silicon with defined structural properties on glass p 105 Crystallographic study of the initial growth region of [mu]c-Si with different preferential orientations p 111

Characteristics and polarization

2003-7-21group-III-nitride optoelectronics into well-developed Si technology 6 Recently Men et al suggested using AlN as the insulating layer in silicon-on-insulator~SOI! materials to al-leviate the self-heating effect which creates obstacle for tra-ditional SOI substrates with a SiO2 buried layer in high volt-age high power applications 7

CiteSeerX — Characterizations of Buried Silicon

CiteSeerX - Document Details (Isaac Councill Lee Giles Pradeep Teregowda): Abstract: Buried silicon nitride layers were produced by implanting ions with 90 Kev in 100 and 111 silicon at 500C under high vacuum conditions The stoichiometric Si/N ratio of 3/4 in the maximum of nitrogen depth distribution was adjusted by the fluence The specimens were annealed at 950C for three hours

Chin Phys Lett

2020-6-10Excited nucleus 198 Bi was produced via the 187 Re(16 O 5n) 198 Bi reaction The γ-rays following the β+/EC (electron capture) decay of 198 Bi were measured in beam by using a powerful multidetector system Based on coincidences with the known γ-rays of 198 Pb five new transitions were identified and eight new energy levels were established for 198 Pb

Improved Performance of the Silicon Anode for Li

2019-5-26Silicon as a negative electrode material for lithium-ion batteries has attracted tremendous attention due to its high theoretical capacity and fluoroethylene carbonate (FEC) was used as an electrolyte additive which significantly improved the cyclability of silicon-based electrodes in this study The decomposition of the FEC additive was investigated by synchrotron-based X-ray photoelectron

in Nitrogen

Silicon and carbon atoms may be chemically disordered in the - or a-phase hexagonal structure causing some local strains The nucleation and growth processes of this feasible metastable phase will depend on the structural defects induced by ion irradiation and could be controlled by ion energy dose rate and substrate temperature 2

Ion Beam Synthesis and Processing of Advanced Materials

2013-10-172 Layers on Si by Samarium Ion Implantation Using a Metal Vapor Vacuum Arc Ion Source O5 29 X Q Cheng H N Zhu and B X Liu ION BEAM INDUCED SLICING AND FOCUSED ION BEAM APPLICATIONS * Optimization of the Ion-Cut Process in Si and SiC O6 1 O W Holland D K Thomas and R B Gregory Ion Beam Slicing of Single Crystal Oxide Thin Films O6 2

Ion Beam Applications in Surface and Bulk Modification

2009-1-21(1) Study of crystalline materials (e g silicon carbide and diamond) using ion beams (2) Development of methods and techniques for ion implantation to produce buried layers (3) Synthesis of sub-micron sized elemental phases and compounds with novel properties

10 1016/j apsusc 2004 09 056

SOI structures with buried nitride can be synthesized by conventional beam-line high-dose nitrogen ion implantation into silicon [8] but this process is quite expensive due to the long implantation time to attain the high nitrogen dose that ranges from 10 17 to over 10 18 atoms/cm 2

Glue Top Si AlN

2016-4-27to study the electrical properties of the top silicon of SOI the spreading resistance profile of SOI was also measured and the experimental results are shown in Fig 3 Three layers of SOI including the top silicon layer buried aluminum nitride and substrate can be clearly distinguished

IBMM 2014 (14

IBMM LEUVEN September 14-19 2014 19th International Conference on Ion Beam Modification of Materials The 19th International Conference on Ion Beam Modification of Materials (IBMM 2014) will be held in Leuven Belgium September 14-19 2014 The International Conference on Ion Beam Modification of Materials (IBMM) is a major international forum to present and discuss recent research

Silicon wafer and semiconductor industry news

In a study in the journal Nanotechnology members of UCI's Nano Thermal Energy Research Group highlight the attributes of holey silicon a computer chip wafer with tiny vertically etched orifices that work to shuttle heat to desired locations (CTE) between the GaN/AlGaN epitaxial layers and the silicon substrate While it's possible

Surface Coatings Technology (v 137 #1)

Titanium nitride films with a low added copper content were synthesized by ion beam-assisted sputtering deposition The role of copper was examined with regard to the structure hardness and elastic/plastic deformation capacity of the composite films produced

Properties of ion beam synthesized buried silicon

1987-1-1SOI (silicon on insulator)-structures were produced by implantation of 330 keV 14 N +-ions with doses ranging from 0 9 to 1 5 10 18 cm −2 at a target temperature of 500C into monocrystalline silicon to form buried silicon nitride layers Post-implantation annealing was done at 1200C up to 5 h In this manner silicon nitride compounds with different stoichiometry and structure are

in Nitrogen

Silicon and carbon atoms may be chemically disordered in the - or a-phase hexagonal structure causing some local strains The nucleation and growth processes of this feasible metastable phase will depend on the structural defects induced by ion irradiation and could be controlled by ion energy dose rate and substrate temperature 2

Silicon carbide

The theoretical gravimetric capacity of silicon (Si) reaches almost 4 000 mAh g −1 This unparalleled value has stimulated the battery community to invest considerable research efforts because the high gravimetric capacity enables one to increase the energy densities of lithium-ion batteries (LIBs) significantly and thus bring future LIB applications such as electrical vehicles to a

EXTRINSIC GAIN LASER AND OPTICAL

2010-4-15The study of Si-nanocrystals and Si-nanowires has matured over the last five years into a critical mass of materials engineering knowledge Nanostructured silicon oxide (SiO 2) phosphate (P 2 O 5) and silicon nitride (Si 3 N 4) glass dielectrics can promote the extrinsic dopant inversion through energy transfer processes PbS/PbSe quantum

Improved Performance of the Silicon Anode for Li

2019-5-26Silicon as a negative electrode material for lithium-ion batteries has attracted tremendous attention due to its high theoretical capacity and fluoroethylene carbonate (FEC) was used as an electrolyte additive which significantly improved the cyclability of silicon-based electrodes in this study The decomposition of the FEC additive was investigated by synchrotron-based X-ray photoelectron

Silicon Photonic Platform for Passive Waveguide

Silicon nitride has a wide optical bandgap that can be varied from 2 7 to 5 0 eV by changing the N/Si ratio thus the transparent window of silicon nitride ranges from 400 nm to the MIR range Silicon nitride is a viable solution to implement "silicon photonics" at wavelengths shorter than 1 1 m

Silicon nitride 93 : proceedings of the international

1993-4-6The Synthesis of a High Quality Low Cost Silicon Nitride Powder by the Carbothermal Reduction of SilicaCarbothermal Reduction Processes for the Preparation of Si3N4 Based Ceramic Powders Effect of Impurities on the Formation of Silicon Nitride by Carbothermal Reduction-Nitridation of Fine Hydrated Silica PowdersA Comparative Study of Three